BDV65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ Mx Unit
VCE= 30 V, IB= 0
BDV65
Collector Cutoff
Current
VCE= 40 V, IB= 0
VCE= 50 V, IB= 0
VCE= 60 V, IB= 0
BDV65A
BDV65B
ICEO
-
-
2
mA
mA
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
Emitter Cutoff Current
IEBO
VBE= 5 V, IC= 0
-
-
-
-
5
VCB= 60 V
VCB= 80 V
BDV65A
IE= 0
0.4
Tj=25°C
VCB= 100 V BDV65B
VCB= 120 V BDV65C
Collector Cutoff
Current
ICBO
mA
VCB= 30 V
VCB= 40 V
VCB= 50 V
VCB= 60 V
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
IE= 0
Tj=150°C
-
-
2
-
60
80
100
120
-
-
-
-
Collector-Emitter
Breakdown Voltage (*)
VCEO
IC= 30 mA, IB = 0
VCE= 4 V, IC= 5 A
IC= 5 A, IB= 20 mA
VCE= 4 V, IC= 5 A
V
-
-
-
hFE
DC Current Gain (*)
1000
-
-
-
-
2
Collector-Emitter
saturation Voltage (*)
VCE(SAT)
-
-
V
V
BDV65A
BDV65B
BDV65C
Base-Emitter
Voltage(*)
VBE
2,5
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
26/09/2012
COMSET SEMICONDUCTORS
3/4
COMSET [ COMSET SEMICONDUCTOR ]
