BDV67A, B, C, D
NPN SILICON DARLINGTONS POWER
TRANSISTORS
The BDV67 is epitaxial base Darlington transistors for audio output stages
and general amplifier and switching applications.
The complementary is BDV66A, B, C, D.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
I
C
BDV67C
BDV67D
BDV67A
BDV67B
I
CM
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
@ T
mb
= 25° C
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
Value
80
100
120
150
100
120
140
160
5.0
Unit
V
V
CBO
Collector-Base Voltage
V
V
EBO
Emitter-Base Voltage
V
16
I
C
Collector Current
A
20
I
B
Base Current
0.5
A
P
T
Power Dissipation
200
Watts
T
J
Junction Temperature
150
°C
-65 to +150
T
S
Storage Temperature
COMSET SEMICONDUCTORS
1/5
COMSET [ COMSET SEMICONDUCTOR ]
