NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDW83
BDW83A
I
C
=30 mA
BDW83B
I
B
=0
BDW83C
BDW83D
BDW83
I
B
=0, V
CE
=30 V
I
B
=0, V
CE
=30 V
BDW83A
I
B
=0, V
CE
=40 V
BDW83B
I
B
=0, V
CE
=50 V
BDW83C
I
B
=0, V
CE
=60 V
BDW83D
I
E
= 0, V
CB
=45 V
BDW83
I
E
= 0, V
CB
=60 V
BDW83A
I
E
= 0, V
CB
=80 V
BDW83B
I
E
= 0, V
CB
=100 V BDW83C
I
E
= 0, V
CB
=120 V BDW83D
I
E
= 0, V
CB
=45 V
BDW83
T
case
= 150°C
I
E
= 0, V
CB
=60 V
BDW83A
T
case
= 150°C
I
E
= 0, V
CB
=80 V
BDW83B
T
case
= 150°C
I
E
= 0, V
CB
=100 V
BDW83C
T
case
= 150°C
I
E
= 0, V
CB
=120 V
BDW83D
T
case
= 150°C
V
EB
=5.0 V, I
C
=0
I
C
=6 A , V
CE
=3.0 V
I
C
=15 A , V
CE
=3.0 V
I
C
=6 A , I
B
=12 mA
I
C
=15 A , I
B
=150 mA
I
C
=6 A , I
B
=3 A
I
E
= 15 A , I
E
= 0
IC = 10 A,
IB1 =-IB2=40 mA
RL=3Ω; VBE(off) = -4.2V
Duty Cycle≤2%
Min
45
60
80
100
120
-
Typ
-
-
-
-
-
-
Max
-
-
-
-
-
1
Unit
V
CEO(SUS)
Collector-Emitter Sustaining
Voltage (*)
V
I
CEO
Collector Cutoff Current
mA
-
-
0.5
I
CBO
Collector Cutoff Current
mA
-
-
5
I
EBO
h
FE
V
CE(SAT)
V
BE(on)
V
EC
t
on
t
off
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter saturation
Voltage (1)
Base-Emitter Voltage (*)
Parallel Diode Forward
Voltage
Turn-on time
Turn-off time
-
750
100
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
7
2
20 K
-
2.5
4
2.5
3.5
-
-
mA
-
V
V
µs
(*) Pulse Duration = 300
µs,
Duty Cycle <= 2%
23/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
