BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Switching
Suitable for :
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CER
V
EBO
V
CBO
V
CEX
I
C
I
B
P
T
T
J
T
S
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
V
BE
=+1.5 V
R
BE
=100Ω
Ratings
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Value
-60
-70
-65
-7
-100
-70
-90
-70
-15
-7
Unit
V
V
V
V
V
A
A
Watts
°C
117
-65 to +200
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
