PNP BDX20
SILICON TRANSISTORS EPITAXIAL BASE
The BDX20 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching
Thermal Fatigue Inspection
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
CEX
V
EBO
I
C
I
B
P
TOT
T
J
T
S
Ratings
Collector to Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
Value
-60
-140
-160
-7
-10
-7
117
200
-65 to +200
Unit
V
V
V
V
A
A
W
°C
°C
V
BE
=1.5 V
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
08/11/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
