NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
Symbol
Ratings
Test Condition(s)
BDX33
BDX34
BDX33A
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
BDX33
BDX33A
BDX34
BDX34A
BDX33B
BDX33C
BDX34B
BDX34C
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33
BDX33A
BDX34
BDX34A
BDX33B
BDX33C
BDX34B
BDX34C
BDX33
BDX33A
BDX34
BDX34A
BDX33B
BDX33C
BDX34B
BDX34C
Min Typ Mx Unit
-
-
-
-
-
-
5
-
-
mA
V
CBO
=45 V
T
CASE
=100°C
I
CBO
Collector-Base Cutoff
Current
V
CBO
=60 V
V
CBO
=80 V
V
CBO
=100 V
I
C
=4.0 A, I
B
=8.0 mA
-
-
2.5
V
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=3.0 A, I
B
=6.0 mA
-
-
2.5
V
F
Forward Voltage (pulse
method)
I
F
=8 A
-
-
4.0
V
I
C
=4.0 A, V
CE
=3.0V
-
-
2.5
V
V
BE
Base-Emitter Voltage (*)
I
C
=3.0 A, V
CE
=3.0V
-
-
2.5
V
CE
=3.0 V, I
C
=4.0 A
750
-
-
-
h
FE
DC Current Gain (*)
V
CE
=3.0 V, I
C
=3.0 A
750
-
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
rated by an auxiliary circuit
COMSET SEMICONDUCTORS
5/6
COMSET [ COMSET SEMICONDUCTOR ]
