BDX62 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
Value
-60
-80
-100
-120
-60
-80
-100
-120
-5.0
-8
-12
-0.15
90
-55 to +200
Unit
V
CEO
Collector-Emitter Voltage
V
V
CEV
V
EBO
I
C
I
B
P
T
T
J
T
S
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
V
BE
=-1.5 V
V
V
A
A
W
°C
I
C(RMS)
I
CM
@ T
C
= 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.94
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4
COMSET [ COMSET SEMICONDUCTOR ]
