PNP SILICON DARLINGTONS
General purpose darlingtons designed for power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
Value
-60
-80
-100
-120
-60
-80
-100
-120
-5.0
Unit
V
V
CEV
Collector-EmitterVoltage
V
BE
=-1.5 V
V
V
EBO
Emitter-Base Voltage
V
I
C(RMS)
I
C
Collector Current
-8
A
-12
I
CM
I
B
Base Current
-0.15
A
P
T
Power Dissipation
@ T
C
= 25°
90
Watts
W/°C
T
J
T
S
Junction Temperature
Storage Temperature
-55 to +200
°C
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COMSET [ COMSET SEMICONDUCTOR ]
