NPN SILICON DARLINGTONS
General purpose darlingtons designed for power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
Value
60
80
100
120
80
100
120
140
5.0
Unit
V
V
CEV
Collector-EmitterVoltage
V
BE
=-1.5 V
V
V
EBO
Emitter-Base Voltage
V
I
C(RMS)
I
C
Collector Current
8
A
12
I
CM
I
B
Base Current
0.15
A
P
T
T
J
T
S
Power Dissipation
@ T
C
= 25°
90
Watts
W/°C
Junction Temperature
Storage Temperature
-55 to +200
°C
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COMSET [ COMSET SEMICONDUCTOR ]
