NPN SILICON DARLINGTONS
General purpose darlingtons designed for power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
Value
60
80
100
120
80
100
120
140
5.0
Unit
V
V
CBO
Collector-BaseVoltage
V
V
EBO
Emitter-Base Voltage
V
I
C(RMS)
I
C
Collector Current
12
A
16
I
CM
I
B
Base Current
0.2
A
P
T
T
J
T
S
Power Dissipation
@ T
C
= 25°
117
Watts
W/°C
Junction Temperature
Storage Temperature
-55 to +200
°C
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COMSET [ COMSET SEMICONDUCTOR ]
