BDX 66, A, B, C
PNP SILICON DARLINGTONS
High current power darlingtons designed for power amplification and
switching applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
-V
CEO
Collector-Emitter Voltage
Ratings
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
Value
60
80
100
120
60
80
100
120
5.0
Unit
V
-V
CBO
Collector-Base Voltage
V
-V
EBO
Emitter-Base Voltage
V
-I
C(RMS)
-I
C
Collector Current
16
A
20
-I
CM
-I
B
Base Current
0.25
A
P
T
Power Dissipation
@ T
C
= 25°
150
Watts
W/°C
T
J
T
S
Junction Temperature
Storage Temperature
-55 to +200
°C
COMSET SEMICONDUCTORS
1/4
COMSET [ COMSET SEMICONDUCTOR ]
