BDX67 – A – B – C
THERMAL CHARACTERISTICS
Symbol
Ratings
BDX67
BDX67A
BDX67B
BDX67C
Value
Unit
R
thJ-C
Thermal Resistance, Junction to Case
1.17
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDX67
Min
60
80
100
120
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
Unit
V
CEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
I
C
=0.1 A,
L=25mH
V
CE
=30 V
V
CE
=40 V
V
CE
=50 V
V
CE
=60 V
V
BE
=5 V
T
CASE
=25°C
V
CB
=60 V
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
V
I
CEO
Collector Cutoff Current
3
mA
I
EBO
Emitter Cutoff Current
5.0
mA
-
BDX67
-
-
BDX67A
-
-
-
-
-
1
5
mA
1
5
I
CBO
Collector-Base Cutoff
Current
T
CASE
=200°C
V
CB
=40 V
T
CASE
=25°C
V
CB
=80 V
T
CASE
=200°C
V
CB
=50 V
05/10/2012
COMSET SEMICONDUCTORS
2/4
COMSET [ COMSET SEMICONDUCTOR ]
