BDX67, A, B, C
NPN SILICON DARLINGTONS
High current power darlingtons designed for power amplification and
switching applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
Value
60
80
100
120
80
100
120
140
5.0
Unit
V
V
CBO
Collector-Base Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C(RMS)
I
C
Collector Current
16
A
20
I
CM
I
B
Base Current
0.25
A
P
T
Power Dissipation
@ T
C
= 25°
150
Watts
W/°C
T
J
T
S
Junction Temperature
Storage Temperature
-55 to +200
°C
COMSET SEMICONDUCTORS
1/5
COMSET [ COMSET SEMICONDUCTOR ]
