BDY55 – BDY56
NPN SILICON TRANSISTORS, DIFFUSED MESA
The BDY55 and BDY56 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J
T
S
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
BDY55
BDY56
BDY55
BDY56
Value
60
120
100
150
7
15
7
117
200
-65 to +200
Unit
V
V
V
A
A
W
°C
@ T
C
= 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
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