BDY57 – BDY58
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J
T
S
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
Ratings
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
Value
80
125
120
160
10
25
6
Unit
V
V
V
A
A
Watts
175
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDY57
BDY58
Value
1
Unit
°C/W
COMSET SEMICONDUCTORS
1/3