NPN BFW16A
HF WIDEBAND TRANSISTORS
The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector
connected to the case. The transistor has extremely good intermodulation properties and a high
power gain.It is a ruggedized version of the BFW16, which it succeds.
It is primarily intended for :
•Final and driver stages of channel and band aerial amplifiers with high outpout power for
bands I , II , III , IV , V (40-860 MHz).
•Final stage of the wideband vertical amplifier in high speed oscilloscopes.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBOM
V
EBO
V
CERM
I
C
I
CM
Pt
T
J
T
Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
(open emitter ; peak value)
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I
B
= 0
I
E
= 0
I
C
= 0
R
BE
<=50Ω
Value
25
40
2
40
150
300
1.5
200
-65 to +200
Unit
V
V
V
V
mA
mA
W
°C
°C
@ T
C
= 125°
THERMAL CHARACTERISTICS
Symbol
R
thJa
R
thJmb
R
thJmb-h
Ratings
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
Thermal Resistance, Junction to Mounting Base to heatsink
Value
250
50
1.2
Unit
K/W
K/W
K/W
09/11/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
