NPN BSS50A-51A-52A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EB0
Ratings
Collector Cutoff Current
Test Condition(s)
I
E
= 0 ;V
CB
= 45V
I
E
= 0 ;V
CB
= 60V
I
E
= 0 ;V
CB
= 80V
I
C
= 0 ;V
EB
=4 V
Min
-
Typ Mx Unit
-
50
nA
Emitter Cutoff Current
BSS50A
BSS51A
BSS52A
BSS50A
BSS51A
BSS52A
-
-
-
-
-
-
-
-
-
-
800
-
-
-
-
-
-
-
-
-
-
-
700
1.3
1.3
1.6
2.3
1.6
1.6
1.9
2.2
2.2
-
µA
V
CE(SAT)
Collector-Emitter saturation
Voltage
V
BE(SAT)
Base-Emitter saturation
Voltage
I
C
=500 mA , I
B
=0.5 mA
I
C
=500 mA , I
B
=0.5 mA, T
j
=200°C
I
C
=1 A, I
B
=1 mA
BSS51A
I
C
=1 A, I
B
=1 mA , T
j
=200°C
I
C
=1 A, I
B
=4 mA
BSS50A
I
C
=1 A, I
B
=4 mA , T
j
=200°C
BSS52A
I
C
=500 mA , I
B
=0.5 mA
I
C
=1 A, I
B
=1 mA
BSS51A
I
C
=1 A, I
B
=4 mA
I
C
=150 mA , V
CE
=10 V
V
h
FE
DC Current Gain
I
C
=500 mA , V
CE
=10 V
I
C
=500 mA , V
CE
=5 V
f = 35 MHz
I
Con
=500 mA
I
B1
=-I
B2
=0.5 mA
I
Con
=1 mA
I
B1
=-I
B2
=1 mA
h
fe
t
on
t
off
t
on
t
off
Small Signal Current Gain
Switching times
Switching times
BSS50A
BSS52A
BSS50A
BSS51A
BSS52A
BSS50A
BSS51A
BSS52A
BSS50A
BSS51A
BSS52A
-
2000
-
-
-
-
-
-
-
10
0.4
1.5
0.4
1.5
-
-
-
-
-
-
µs
µs
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
