NPN BSX62-BSX63
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCB = 40 V, IE =0
BSX62
BSX63
BSX62
-
-
-
-
100
100
nA
µA
VCB = 60 V, IE =0
ICBO
Collector Cutoff Current
VCB = 40 V, IE = 0
Tj = 150°C
VCB = 60 V, IE =0
Tj = 150°C
BSX63
IEBO
Emitter Cutoff Current
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
VBE = 5.0 V, IC =0
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 200 mA
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 200 mA
IC = 100 mA, VCE = 1 V
IC = 1 A, VCE = 1 V
IC = 2 A, VCE = 5 V
-
-
-
-
-
-
1
-
-
-
-
-
-
-
-
-
100
0.7
0.8
1.2
1.3
1
nA
V
VCE(SAT)
VBE(SAT)
VBE
V
V
Base-Emitter Voltage
1.2
1.3
BSX62/10
BSX63/10
BSX62/16
BSX63/16
BSX62/10
BSX63/10
BSX62/16
BSX63/16
BSX62/10
BSX63/10
BSX62/16
BSX63/16
-
-
110
180
100
160
70
-
IC = 100 m
VCE = 1 V
-
160
250
-
63
100
-
IC = 1 A
VCE = 1 V
hFE
DC Current Gain
-
IC = 2 A
VCE = 1 V
-
120
70
-
IC = 200 mA, VCE = 10 V
f = 100MHz
fT
Transition frequency
Collector capacitance
30
-
-
MHz
pF
IE = ie =0, VCB = 10 V
f = 1MHz
CC
-
70
26/09/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
