SEMICONDUCTORS
BTA12 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DRM
V
RRM
Ratings
Repetitive peak
off-state voltage
Repetitive peak
reverse voltage
Test Condition(s)
I
D
= 0.1 mA
I
D
= 0.5 mA
BTA12-600B
BTA12-800B
BTA12-600B
BTA12-800B
T2+ G+
Min
600
800
600
800
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
25
50
50
100
1.5
1.5
1.5
1.8
15
1.55
Unit
V
I
GT
Gate trigger current
V
D
= 12 V
R
L
= 100
Ω
T2+ G-
T2- G-
T2- G+
T2+ G+
mA
V
GT
Gate trigger voltage
V
D
= 12 V
R
L
= 100
Ω
T2+ G-
T2- G-
T2- G+
V
I
H
V
T
Holding current
On-state voltage
I
T
= 100 mA, I
GT
= 20 mA
I
T
= 17 A
mA
V
29/09/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
