SEMICONDUCTORS
NPN BU508DF
SILICON DIFFUSED POWER TRANSISTOR
The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated
efficiency diode.
It is intended for high voltage, high-speed.
Primarily for use in horizontal deflection circuits of colour television receivers.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
t
J
t
s
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current Peak
Base Current
Base Current Peak
Total Dissipation
@ T
mb
< 25°
Junction Temperature
Storage Temperature range
Value
1500
700
5
8
15
4
6
34
150
-65 to +150
Unit
V
V
V
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Junction To Heatsink
Junction To Heatsink
Junction Ambient
Conditions
Without Heatsink Compound
With Heatsink Compound
In Free Air
Value
Typ.
-
-
35
Max
3.7
2.8
-
Unit
K/W
15/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
