SEMICONDUCTORS
BU806
SILICON DARLINGTON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in
a TO-220 plastic package.
They are high voltage, high current devices for fast switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
t
J
t
s
Collector-Base Voltage
Ratings
Value
400
400
200
6
8
15
2
T
mb
< 25°C
60
150
Unit
V
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation at Case Temperature
Junction Temperature
Storage Temperature range
V
V
A
A
A
W
°C
-65 to +150
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
2.08
70
Unit
°C/W
29/09/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
