NPN BUV23
POWER SWITCH APPLICATIONS
The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.
They are intended for use in power switching appications in military and industrial equipments.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
V
CER
I
C
I
CM
I
B
P
t
T
J
T
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Ratings
I
B
= 0
I
E
= 0
I
C
= 0
V
BE
= -1.5V
R
BE
<= 100
Ω
t
p
= 10ms
@ T
C
= 25°
Value
325
400
7.0
400
390
30
40
6
250
200
-65 to +200
Unit
V
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
0.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
EB0(SUS)
I
CEO
I
CEX
Ratings
Collector-Emitter
Sustaining Voltage (1)
Emitter-BaseBreakdown
Voltage (1)
Collector Cutoff Current
Collector Cutoff Current
Test Condition(s)
I
C
=200 mA, L= 25mH
I
C
=0A , I
E
=50 mA
V
CE
=260 V , I
B
=0A
V
CE
= V
CEX
, V
BE
= -1.5V
V
CE
= V
CEX
, V
BE
= -1.5V, T
case
= 125°C
Min Typ Mx Unit
325
7
-
-
-
-
-
-
-
-
-
-
3
3
12
1/2
V
V
mA
mA
COMSET SEMICONDUCTORS
COMSET [ COMSET SEMICONDUCTOR ]
