SEMICONDUCTORS
BUV26 – BUV26A
SILICON POWER TRANSISTORS
High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast
switching applications such as high frequency and efficiency converters, switching regulators
and motor control.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t
T
j
T
stg
Ratings
BUV26
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature range
t
p
= 10ms
85
150
t
p
= 10ms
I
E
= 0
I
B
= 0
I
C
= 0
180
90
7
14
25
4
6
65
Unit
BUV26A
200
100
5
V
V
V
A
A
A
A
W
°C
-65 to 150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
Ratings
From junction to mounting base
BUV26
BUV26A
Value
1.76
Unit
°C/W
29/09/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
