SEMICONDUCTORS
BUV27 – BUV27A
SILICON POWER TRANSISTORS
High-speed,NPN power transistors in a TO-220 envelope. They are intended for
fast switching applications such as high frequency and efficiency converters,
switching regulators and motor control.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CESM
V
CEO
V
CEsat
I
Csat
I
C
I
CM
I
B
I
BM
Collector-Emitter Voltage
Peak value ; V
BE
=0
Collector-Emitter Voltage
Ratings
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
Value
240
300
120
150
1.5
1
8
7
15
25
4
6
Unit
V
V
V
A
A
A
A
A
Collector-Emitter Saturation Voltage
Collector Current Saturation
Collector Current
Collector Peak Current
Base Current
Base Current
Symbol
P
t
T
j
T
s
Power Dissipation
Junction
Temperature
Ratings
@ T
mb
< 25°
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
Value
65
150
Unit
Watts
°C
Storage Temperature range
-65 to +150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
Ratings
From junction to mounting base
BUV27
BUV27A
Value
1.92
Unit
K/W
Page 1 of 3
COMSET [ COMSET SEMICONDUCTOR ]
