NPN BUX12
HIGH CURRENT, HIGH SPEED , HIGH
POWER TRANSISTOR
The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3.
They are intended for use in switching and linear appications in military and industrial
equipment.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
CM
I
B
P
t
T
J
T
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I
B
= 0
I
E
= 0
I
C
= 0
V
BE
= -1.5V
t
p
= 10ms
@ T
C
= 25°
250
300
7.0
300
20
25
4
150
200
-65 to +200
Unit
V
V
V
V
A
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
