NPN BUX40
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
EB0
I
CEO
I
CEX
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
I
S/B
E
S/B
f
T
t
on
t
s
t
f
Ratings
Collector-Emitter Sustaining
Voltage (*)
Emitter-Base Voltage
Collector Cutoff Current
Test Condition(s)
I
C
=200 mA
Min
125
7
-
-
-
-
15
8
-
-
-
4
1
15
8
-
-
-
Typ
-
-
-
-
-
-
-
-
0.6
0.9
1.7
-
-
-
-
0.35
0.85
0.14
Max
-
-
1
1
5
1
45
-
1.2
1.6
2
-
-
-
-
1.2
1
0.4
Unit
V
V
mA
mA
mA
-
V
A
A
MHz
I
C
=0A , I
E
=50 mA
V
CE
=100 V , I
B
=0A
V
CE
= V
CEX
, V
BE
= -1.5V
Collector Cutoff Current
V
CE
= V
CEX
, V
BE
= -1.5V
T
case
= 125°C
Emitter Cutoff Current
V
EB
=5.0 V, I
C
=0
I
C
=10 A , V
CE
=4.0 V
DC Current Gain (*)
I
C
=15 A , V
CE
=4.0 V
I
C
=10 A , I
B
=1 A
Collector-Emitter saturation
Voltage (*)
I
C
=15 A , I
B
=1.88 A
Base-Emitter saturation Voltage (*) I
C
=15 A , I
B
=1.88 A
V
CE
=30 V , t
s
= 1s
Second breakdown collector
current
V
CE
=50 V , t
s
= 1s
V
clamp
=125 V
Clamped E
S/B
Collector current
L=500 µH
V
CE
=15 V , I
C
=1 A
Transition frequency
f=10 MHz
I
C
=15 A , I
B
=1.88 A
Turn-on time
V
CC
=30 V
Storage time
File time
I
C
=15 A , V
CC
=30 V
I
B1
= -I
B2
=1.88 A
µs
(*) Pulse Duration = 300
µs,
Duty Cycle <= 2%
26/10/2012
COMSET SEMICONDUCTORS
3/3
COMSET [ COMSET SEMICONDUCTOR ]
