NPN BUX48 – BUX48A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
EBO
Ratings
Collector-Emitter
Sustaining Voltage (*)
Emitter-Base Voltage
Test Condition(s)
I
C
= 100 mA
I
C
= 0
I
E
= 50 mA
V
CE
= 400 V
I
B
= 0
R
BE
= 10Ω
V
CE
= 450 V
I
B
= 0
R
BE
= 10Ω
V
CE
= 850 V
V
BE
= 0
V
CE
= 1000 V
V
BE
= 0
@ 25°C
BUX48
@ 125°C
@ 25°C
@ 125°C
@ 25°C
@ 125°C
@ 25°C
@ 125°C
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
Min
400
450
7
-
-
-
-
-
-
-
-
-
8
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
30
0.5
4
0.5
4
0.2
2
0.2
2
0.1
-
1.5
5
1.6
Unit
V
V
I
CER
Collector Cutoff
Current
mA
I
CES
Collector Cutoff
Current
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter
saturation Voltage (*)
mA
I
EBO
h
FE
V
EB
= 5 V, I
C
= 0
I
C
= 10 A, V
CE
= 5 V
I
C
= 8 A, V
CE
= 5 V
I
C
= 10 A, I
B
= 2 A
I
C
= 8 A, I
B
= 1.6 A
I
C
= 15 A, I
B
= 34 A
I
C
= 12 A, I
B
= 2.4 A
I
C
= 10 A, I
B
= 2 A
I
C
= 12 A, I
B
= 2.4 A
mA
-
V
CE(SAT)
V
V
BE(SAT)
SWITCHING TIMES
Symbol
t
on
t
s
t
f
t
on
t
s
t
f
Ratings
Turn-on time
Storage time
File time
Turn-on time
Storage time
File time
Test Condition(s)
I
C
=10 A , I
B1
= -I
B2
=2 A
V
CC
=300 V, V
EB
= 5 V
I
C
=8 A , I
B1
= -I
B2
=1.6 A
V
CC
=300 V, V
EB
= 5 V
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
0.9
2
0.4
0.9
2
0.4
Unit
µs
µs
(*) Pulse Duration = 300
µs,
Duty Cycle <= 2%
08/11/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
