SEMICONDUCTORS
BUZ31
POWER MOS TRANSISTORS
FEATURE
•
•
•
•
•
Nchannel
Enhancement mode
Avalanche-rated
TO-220 envelope
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
I
DS
I
DM
I
AR
E
AR
E
AS
V
GS
R
DS(on)
P
T
t
J
t
stg
Ratings
Drain-Source Voltage
Continuous Drain Current T
C
= 37°C
Pulsed Drain Current T
C
= 25°C
Avalanche Current, Limited by T
jmax
Avalanche Energy, Periodic Limited by T
jmax
Avalanche Energy, Single pulse
I
D
= 14.5 A, V
DD
= 50 V, R
GS
= 25
Ω
L = 1.42 mH, T
j
= 25°C
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T
C
= 25°C
Operating Temperature
Storage Temperature range
Value
200
14.5
58
14.5
9
200
20
0.2
95
-55 to +150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Thermal Resistance, chip case
Thermal Resistance, chip to ambient
Value
<1.32
<75
Unit
K/W
01/10/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
