SEMICONDUCTORS
BUZ71
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in switched mode power supplies,
motor control, welding,
DC-DC & DC-AC converters, and in general purpose
switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
I
DS
I
DM
I
AR
E
AS
E
AR
V
GS
R
DS(on)
P
T
t
J
t
stg
Ratings
Drain-Source Voltage
Continuous Drain Current T
C
= 37°C
Pulsed Drain Current T
C
= 25°C
Avalanche Current, Limited by T
jmax
Avalanche Energy, Single pulse
I
D
= 14 A, V
DD
= 25 V, R
GS
= 25
Ω,
L= 30.6 µH, T
j
= 25°C
Avalanche Energy, Periodic Limited by T
jmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T
C
= 25°C
Operating Temperature
Storage Temperature range
Value
50
14
56
14
6
1
20
0.1
40
-55 to +150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
3.1
75
Unit
K/W
01/10/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
