SEMICONDUCTORS
BUZ73A
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
This is an N-channel enhancement mode silicon gate
power field effect transistor designed for applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power.
This type can be operated directly from integrated circuits
and housed in a TO-220 envelope.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
SD
I
DS
I
DM
V
GS
R
DS(on)
P
T
t
J
t
stg
t
L
Ratings
Drain-Source Voltage
Drain-Source diode Voltage
Continuous Drain Current T
C
= 37°C
Pulsed Drain Current T
C
= 25°C
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T
C
= 25°C
Operating Temperature
Storage Temperature range
Lead Temperature 1.6 mm from case for 10 seconde
Value
200
<1.7
5.5
22
20
0.6
40
-55 to +150
-55 to +150
300
Unit
V
V
A
A
V
Ω
Watts
°C
01/10/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
