MJ900 – MJ901 PNP
MJ1000 – MJ1001 NPN
Symbol
Ratings
MJ900
MJ1000
MJ901
MJ1001
@ T
C
< 25°
MJ900
MJ1000
Derate above
MJ901
25°C
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Value
Unit
I
B
Base Current
0.1
Adc
Watts
W/°C
90
0.515
P
T
Power Dissipation
T
J
Junction Temperature
-65 to +200
°C
T
S
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
MJ900
MJ1000
MJ901
MJ1001
Value
1.94
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Min Typ Mx Unit
60
80
-
-
-
-
-
500
-
µAdc
-
Vdc
-
I
C
=100 mAdc, I
B
=0
I
CEO
Collector Cutoff Current
V
CE
=30 Vdc, I
B
=0
V
CE
=40 Vdc, I
B
=0
Page 2 of 4
COMSET [ COMSET SEMICONDUCTOR ]
