PNP MJ4030 – MJ4031 – MJ4032
MEDIUM POWER COMPLEMENTARY SILICON
TRANSISTORS
They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration
and are mounted in Jedec TO-3 metal case.
They are intented for use as output devices in complementary general purpose amplifier
applications.
The complementary NPN types are the MJ4033, MJ4034, MJ4035
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Collector-Base Voltage
Ratings
I
E
=0
MJ4030
MJ4031
MJ4032
MJ4030
MJ4031
MJ4032
MJ4030
MJ4031
MJ4032
Value
-60
-80
-100
-60
-80
-100
-5.0
-16
-0.5
150
200
-65 to +200
Unit
V
V
CEO
Collector-EmitterVoltage
I
B
=0
V
V
EBO
I
C
I
B
P
T
T
J
T
s
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
I
C
=0
V
A
A
W
°C
@ T
C
< 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
