MEDIUM POWER COMPLEMENTARY SILICON
TRANSISTORS
For use as output devices in complementary general purpose amplifier
applications.
•
High DC current Gain – h
FE
=3500 (Typ) @ I
C
=10 Adc
•
Monolithic Construction with Built-in Base Emitter Shunt Resistor
The MJ4030/31/32 ares the transistors NPN
The complementary PNP types are the MJ4033/34/35
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
Value
60
80
100
60
80
100
Unit
V
CBO
Collector-Base Voltage
I
E
=0
V
V
CEO
Collector-EmitterVoltage
I
B
=0
V
V
EBO
Emitter-Base Voltage
I
C
=0
5.0
V
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COMSET [ COMSET SEMICONDUCTOR ]
