MJ900 – MJ901 PNP
COMPLEMENTARY POWER DARLINGTONS
The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic
Darlington configuration, and are mounted in JEDEC TO-3 metal case.
They are intended for use in power linear and switching applications.
Their complementary NPN types are the MJ1000 and MJ1001 respectively.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
J
T
S
Collector-Base Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Ratings
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
MJ900
MJ901
Value
-60
-80
-60
-80
-5.0
-8.0
-0.1
90
0.515
-65 to +200
Unit
V
V
V
A
A
W
W/°C
°C
I
B
=0
I
C(RMS)
@ T
C
< 25°
Derate above 25°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.94
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
