MJ900 – MJ901 PNP
MJ1000 – MJ1001 NPN
Symbol
I
EBO
Ratings
Emitter Cutoff Current
Test Condition(s)
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Min Typ Mx Unit
-
-
2.0
mAdc
V
BE
=5.0 Vdc, I
C
=0
V
CB
=60 V, R
BE
=1.0 k ohm
-
-
-
-
-
1.0
-
mAdc
-
5.0
-
I
CER
Collector-Emitter Leakage
Current
V
CB
=80 V, R
BE
=1.0 k ohm
V
CB
=60 V, R
BE
=1.0 k ohm,
T
C
=150°C
V
CB
=80 V, R
BE
=1.0 k ohm,
T
C
=150°C
I
C
=3.0 A, I
B
=12 mAdc
-
-
2.0
Vdc
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=8.0 A, I
B
=40 mAdc
-
-
4.0
Symbol
V
F
Ratings
Forward Voltage (pulse
method)
I
F
=3 A
Test Condition(s)
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Min Typ Mx Unit
-
1.8
-
V
V
BE
Base-Emitter Voltage (*)
I
C
=3.0 Adc, V
CE
=3.0Vdc
-
-
2.5
V
V
CE
=3.0 Vdc, I
C
=3.0 Adc
1000
-
-
-
H
FE
DC Current Gain (*)
V
CE
=3.0 Vdc, I
C
=4.0 Adc
750
-
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
! ! ! For PNP types current and voltage values are negative ! ! !
Page 3 of 4
COMSET [ COMSET SEMICONDUCTOR ]
