SEMICONDUCTORS
MJE13005
SILICON POWER TRANSISTORS
NPN power transistors in a TO-220 package. They are intended for high voltage, high speed
power switching inductive circuits where fall time is critical. They are particularly suited for
115V and 220V SWITCHMODE applications such as switching regulator’s, inverters, motor
controls, solenoid/relay drivers and deflection circuits
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
T
t
J
t
s
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (*)
Base Current
Base Peak Current (*)
Emitter Current
Emitter Peak Current (*)
Power Dissipation at Case Temperature
Power Dissipation at free Air Temperature
Junction Temperature
Storage Temperature range
Value
400
700
9
4
8
2
4
6
12
75
2
150
-65 to +150
Unit
V
V
V
A
A
A
A
A
A
W
°C
@ T
mb
< 25°
(*)Pulse Width =
5ms, duty cycle
<10%.
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.67
62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
