SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE
THYRISTORS
•
•
•
•
•
•
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max I
GT
of 200 µA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Value
A
B
C
D
E
M
S
N
Symbol
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
Ratings
Repetitive peak off-state voltage
(see Note1)
Repetitive peak reverse voltage
Continuous on-state current at
(or below) 80°C case temperature
(see note2)
Average on-state current
(180° conduction angle) at(or below)
80°C case temperature (see Note3)
Surge on-state current (see Note4)
Peak positive gate current
(pulse width
≤300
µs)
Peak power dissipation
(pulse width
≤300
µs)
Average gate power dissipation
(see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
Unit
V
V
A
A
A
A
W
W
°C
°C
°C
100 200 300 400 500 600 700 800
100 200 300 400 500 600 700 800
5
3.2
30
0.2
1.3
0.3
-40 to +110
-40 to +125
230
29/10/2012
COMSET SEMICONDUCTORS
1|4
COMSET [ COMSET SEMICONDUCTOR ]
