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TIC116S 参数 Datasheet PDF下载

TIC116S图片预览
型号: TIC116S
PDF下载: 下载PDF文件 查看货源
内容描述: PNPN硅反向阻断晶闸管 [P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS]
分类和应用: 栅极局域网
文件页数/大小: 4 页 / 164 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号TIC116S的Datasheet PDF文件第2页浏览型号TIC116S的Datasheet PDF文件第3页浏览型号TIC116S的Datasheet PDF文件第4页  
SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,
TIC116N, TIC116S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE
THYRISTORS
8 A Continuous On-State Current
80 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max I
GT
of 20 mA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Value
A
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
Repetitive peak off-state voltage
(see Note1)
Repetitive peak reverse voltage
Continuous on-state current at
(or below) 70°C case temperature
(see note2)
Average on-state current
(180° conduction angle) at(or below)
70°C case temperature (see Note3)
Surge on-state current (see Note4)
Peak positive gate current
(pulse width
≤300
µs)
Peak power dissipation
(pulse width
≤300
µs)
Average gate power dissipation
(see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
Symbol
Ratings
B
C
Unit
M
S
N
V
V
A
A
A
A
W
W
°C
°C
°C
D
E
100 200 300 400 500 600 700 800
100 200 300 400 500 600 700 800
8
5
80
3
5
1
-40 to +110
-40 to +125
230
29/10/2012
COMSET SEMICONDUCTORS
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