SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,
TIC116N, TIC116S
THERMAL CHARACTERISTICS
Symbol
t
gt
t
q
R
∂JC
R
∂JA
Gate-controlled
Turn-on time
Circuit-communicated
Turn-off time
Ratings
V
AA
= 30 V, R
L
= 6
Ω,
R
GK(eff)
= 100
Ω,
V
in
= 20 V
V
AA
= 30 V, R
L
= 6
Ω,
I
RM
≈
10 A
Value
0.8
Unit
µs
11
≤
3
≤
62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
DRM
I
RRM
I
GT
Ratings
Repetitive peak off-state current
Repetitive peak reverse current
Gate trigger current
Test Condition(s)
V
D
= Rated V
DRM
, R
GK
= 1 kΩ,
T
C
= 110°C
V
R
= Rated V
RRM
, I
G
= 0,
T
C
= 110°C
V
AA
= 6 V, R
L
= 100
Ω,
t
p(g)
≥
20µs
V
AA
= 6 V, R
L
= 100
Ω,
R
GK
= 1 kΩ, t
p(g)
≥
20µs,
T
C
= -40°C
V
AA
= 6 V, R
L
= 100
Ω,
R
GK
= 1 kΩ, t
p(g)
≥
20µs,
V
AA
= 6 V, R
L
= 100
Ω,
R
GK
= 1 kΩ, t
p(g)
≥
20µs,
T
C
= 110°C
V
AA
= 6 V, R
GK
= 1 kΩ, initiating
I
T
= 100 mA
V
AA
= 6 V, R
GK
= 1 kΩ, initiating
I
T
= 100 mA,
T
C
= -40°C
I
TM
= 8A (see Note6)
V
D
= Rated V
D
,
T
C
= 110°C
Min Typ Mx Unit
-
-
-
-
-
0.2
-
-
-
-
-
-
5
-
0.8
-
-
-
-
100
2
2
20
2.5
1.5
-
40
mA
70
1.7
-
V
V/µs
V
mA
mA
mA
V
GT
Gate trigger voltage
I
H
Holding current
V
TM
dv/dt
Peak on-state voltage
Critical rate of rise of off-state
voltage
Note 6:
This parameters must be measured using pulse techniques, t
W
= 300µs, duty cycle
≤
2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body.
Page 2 of 3
COMSET [ COMSET SEMICONDUCTOR ]
