SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE
THYRISTORS
•
•
•
•
•
•
12 A Continuous On-State Current
100 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max I
GT
of 20 mA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Value
A
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
Repetitive peak off-state voltage
(see Note1)
Repetitive peak reverse voltage
Continuous on-state current at
(or below) 70°C case temperature
(see note2)
Average on-state current
(180° conduction angle) at(or below)
70°C case temperature (see Note3)
Surge on-state current (see Note4)
Peak positive gate current
(pulse width
≤300
µs)
Peak power dissipation
(pulse width
≤300
µs)
Average gate power dissipation
(see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
Symbol
Ratings
B
C
Unit
M
S
N
V
V
A
A
A
A
W
W
°C
°C
°C
D
E
100 200 300 400 500 600 700 800
100 200 300 400 500 600 700 800
12
7.5
100
3
5
1
-40 to +110
-40 to +125
230
30/10/2012
COMSET SEMICONDUCTORS
1|4
COMSET [ COMSET SEMICONDUCTOR ]
