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TIC126B 参数 Datasheet PDF下载

TIC126B图片预览
型号: TIC126B
PDF下载: 下载PDF文件 查看货源
内容描述: PNPN硅反向阻断晶闸管 [P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS]
分类和应用: 触发装置可控硅整流器
文件页数/大小: 3 页 / 194 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号TIC126B的Datasheet PDF文件第2页浏览型号TIC126B的Datasheet PDF文件第3页  
SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
12 A Continuous On-State Current
100 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max I
GT
of 20 mA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Value
A
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
Notes:
1.
2.
3.
4.
5.
These values apply when the gate-cathode resistance R
GK
= 1kΩ
These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to
zero at 110°C.
This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
resistive load. Above 70°C derate linearly to zero at 110°C.
This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
This value applies for a maximum averaging time of 20 ms.
Symbol
Ratings
B
C
Unit
M
S
N
V
V
A
A
A
A
W
W
°C
°C
°C
D
E
Repetitive peak off-state voltage
100 200 300 400 500 600 700 800
(see Note1)
Repetitive peak reverse voltage
100 200 300 400 500 600 700 800
Continuous on-state current at (or below)
12
70°C case temperature (see note2)
Average on-state current (180° conduction
7.5
angle) at(or below) 70°C case temperature
(see Note3)
Surge on-state current (see Note4)
100
Peak positive gate current (pulse width
3
≤300
µs)
Peak power dissipation (pulse width
≤300
5
µs)
Average gate power dissipation (see
1
Note5)
Operating case temperature range
-40 to +110
Storage temperature range
-40 to +125
Lead temperature 1.6 mm from case for 10
230
seconds
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