SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
SILICON TRIACS
•
•
•
•
•
•
6 A RMS
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max I
GT
of 5 mA (Quadrants 1-3)
Sensitive gate triacs
Compliance to ROH
ABSOLUTE MAXIMUM RATINGS
Value
A
V
DRM
I
T(RMS)
I
TSM
I
TSM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or below)
70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak on-state surge current half-sine-wave
(see Note4)
Peak gate current
Peak gate power dissipation at (or below)
85°C case temperature (pulse width
≤200
µs)
Average gate power dissipation at (or below)
85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for
10 seconds
Symbol
Ratings
B
Unit
S
N
V
A
A
A
A
W
W
°C
°C
°C
D
M
100 200 400 600 700 800
6
60
70
±1
2.2
0.9
-40 to +110
-40 to +125
230
THERMAL CHARACTERISTICS
Symbol
R
∂JC
R
∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
Value
≤
2.5
≤
62.5
Unit
°C/W
30/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
