SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
•
•
•
•
•
•
6 A RMS
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max I
GT
of 5 mA (Quadrants 1-3)
Sensitive gate triacs
Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Value
A
V
DRM
I
T(RMS)
I
TSM
I
TSM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak on-state surge current half-sine-wave
(see Note4)
Peak gate current
Peak gate power dissipation at (or below)
85°C case temperature (pulse width
≤200
µs)
Average gate power dissipation at (or
below) 85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
100
Symbol
Ratings
B
200
Unit
S
700
D
400
6
60
70
±1
2.2
0.9
M
600
N
800
V
A
A
A
A
W
W
°C
°C
°C
-40 to +110
-40 to +125
230
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