SEMICONDUCTORS
TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M,
TIC225N, TIC225S
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main
Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C
derate linearly to 110°C case temperature at the rate of 200 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below)
the rated value of on-state current. Surge may be repeated after the device has returned
to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below)
the rated value of on-state current. Surge may be repeated after the device has returned
to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
6. This parameters must be measured using pulse techniques, t
W
=
≤1ms,
duty cycle
≤
2 %,
voltage-sensing
contacts, separate from the courrent-carrying contacts are located
within 3.2mm (1/8 inch) from de device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator
with the following characteristics : R
G
= 100Ω, t
p(g)
= 20 µs, t
r
=
≤
15ns, f = 1 kHz.
MECHANICAL DATA CASE TO-220
30/10/2012
COMSET SEMICONDUCTORS
3|4
COMSET [ COMSET SEMICONDUCTOR ]
