SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
THERMAL CHARACTERISTICS
Symbol
R
∂JC
R
∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
Value
≤
1.8
≤
62.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
DRM
Ratings
Repetitive peak
off-state current
Gate trigger
current
Test Condition(s)
V
D
= Rated V
DRM
, , I
G
= 0
T
C
= 110°C
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, I
G
= 0
initiating I
TM
= 100 mA
V
supply
= -12 V†, I
G
= 0
initiating I
TM
= -100 mA
V
supply
= +12 V† (seeNote7)
V
supply
= -12 V† (seeNote7)
I
TM
= ± 12 A, I
G
= 50 mA (see Note6)
V
DRM
= Rated V
DRM
, I
G
= 0
T
C
= 110°C
V
DRM
= Rated V
DRM
, I
TRM
= ± 12A
T
C
= 85°C
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±5
Typ
-
2
-12
-9
20
0.7
-0.8
-0.8
0.9
5
-9
-
-
±1.6
±100
-
Max
±2
50
-50
-50
-
2
-2
-2
2
30
Unit
mA
I
GT
mA
V
GT
Gate trigger
voltage
V
I
H
Holding current
mA
-30
50
-50
±2.1
-
V/µs
-
mA
V
I
L
V
TM
dv/dt
dv/dt
©
Latching current
Peak on-state
voltage
Critical rate of
rise of off-state
voltage
Critical rise of
communication
voltage
†
All voltages are whit respect to Main Terminal 1.
30/10/2012
COMSET SEMICONDUCTORS
2|4
COMSET [ COMSET SEMICONDUCTOR ]
