SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
•
•
•
•
•
•
•
8 A RMS
70 A Peak
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max I
GT
of 50 mA (Quadrants 1-3)
High-temperature, High-current and high-voltage applications
Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-
state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Value
A
V
DRM
I
T(RMS)
I
TSM
I
TSM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at
(or below) 70°C case temperature
(see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak on-state surge current
half-sine-wave (see Note4)
Peak gate current
Peak gate power dissipation at
(or below) 85°C case temperature
(pulse width
≤200
µs)
Average gate power dissipation at
(or below) 85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
Symbol
Ratings
B
C
Unit
M
S
N
V
A
A
A
A
W
W
°C
°C
°C
D
E
100 200 300 400 500 600 700 800
8
70
8
±1
2.2
0.9
-40 to +110
-40 to +125
230
30/10/2012
COMSET SEMICONDUCTORS
1|4
COMSET [ COMSET SEMICONDUCTOR ]
