SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
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High current triacs
16 A RMS
70 A Peak
Glass Passivated Wafer
200 V to 800 V Off-State Voltage
Max I
GT
of 50 mA (Quadrants 1-3)
125 A peak current
Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Value
B
V
DRM
I
T(RMS)
I
TSM
I
GM
T
C
T
stg
T
L
Notes:
1.
2.
3.
These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate
linearly to 110°C case temperature at the rate of 400 mA/°C.
This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
Page 1 of 3
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
200
Symbol
Ratings
C
300
Unit
M
600
D
400
E
500
16
125
S
700
N
800
V
A
A
A
°C
°C
°C
±1
-40 to +110
-40 to +125
230
COMSET [ COMSET SEMICONDUCTOR ]
