SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
DRM
Ratings
Test Condition(s)
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±1.2
Typ
-
12
-19
-16
34
0.8
-0.8
-0.8
0.9
22
-22
-
-
±1.4
±400
±100
±9
Max
±2
50
-50
-50
-
2
-2
-2
2
40
Unit
mA
I
GT
V
GT
I
H
I
L
V
TM
dv/dt
di/dt
dv/dt
©
Repetitive peak V
D
= Rated V
DRM
, , I
G
= 0
off-state current T
C
= 110°C
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
Gate trigger
current
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
Gate trigger
voltage
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= -12 V†, R
L
= 10
Ω,
t
p(g)
= > 20 µs
V
supply
= +12 V†, I
G
= 0
Holding current initiating I
TM
= 100 mA
V
supply
= -12 V†, I
G
= 0
initiating I
TM
= -100 mA
V
supply
= +12 V† (seeNote5)
Latching
current
V
supply
= -12 V† (seeNote5)
Peak on-state
I
TM
= ± 22.5 A, I
G
= 50 mA (see Note4)
voltage
Critical rate of
V
DRM
= Rated V
DRM
, I
G
= 0
rise of off-state
T
C
= 110°C
voltage
Critical rate of
V
DRM
= Rated V
DRM
, I
GT
= 50 mA
rise of off-state
di
G
/dt = 50mA/µs, T
C
= 110°C
current
Critical rise of
V
DRM
= Rated V
DRM
, I
T
= 1.4 I
T(RMS)
communication
di/dt = 0.5 I
T(RMS)
/ms, T
C
= 80°C
voltage
mA
V
mA
-40
80
-80
±1.7
-
-
-
mA
V
V/µs
A/µs
V/µs
†
All voltages are whit respect to Main Terminal 1.
Notes:
1.
2.
3.
4.
5.
These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to
110°C case temperature at the rate of 400 mA/°C.
This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
This parameters must be measured using pulse techniques, t
W
=
≤1ms,
duty cycle
≤
2 %, voltage-
sensing
contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch)
from de device body.
The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the
following characteristics : R
G
= 100Ω, t
p(g)
= 20 µs, t
r
=
≤
15ns, f = 1 kHz.
30/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
