SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
•
•
•
•
•
•
•
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High current triacs
16 A RMS
70 A Peak
Glass Passivated Wafer
200 V to 800 V Off-State Voltage
Max I
GT
of 50 mA (Quadrants 1-3)
125 A peak current
Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to
the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Value
B
V
DRM
I
T(RMS)
I
TSM
I
GM
T
C
T
stg
T
L
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at
(or below) 70°C case temperature
(see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from
case for 10 seconds
200
Symbol
Ratings
C
300
Unit
M
S
N
V
A
A
A
°C
°C
°C
D
400
E
500 600 700 800
16
125
±1
-40 to +110
-40 to +125
230
THERMAL CHARACTERISTICS
Symbol
R
∂JC
R
∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
COMSET SEMICONDUCTORS
Value
≤
1.9
≤
62.5
Unit
°C/W
1|3
30/10/2012