SEMICONDUCTORS
NPN TIP100-101-102
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are designed for general purpose amplifier and low-speed switching
applications.
PNP complements are TIP105-106-107
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Collector-Base Voltage
Ratings
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
Value
60
80
100
60
80
100
5
Unit
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current
15
A
I
B
Base Current
1
A
@ T
c
< 25°
P
T
Power Dissipation
@ T
a
< 25°
80
Watts
2
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
04/10/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
